Stepanov Anton
Engineer-researcher (Laboratory of Magnetic Semiconductors)
Papers
1) Effect of argon ion irradiation on the electrical transport and electronic characteristics of Bi2Se3 single crystals [Текст] / V.V. Marchenkov, B.M. Fominykh, A.N. Perevalova, A.E. Stepanov, S.V. Naumov, E.B. Marchenkova, A.M. Bartashevich, K.V. Shalomov, N.V. Gushchina, V.V. Ovchinnikov // Nuclear Instruments and Methods in Physics Research Section B. — 2025. — V. 561. — P. 165633 (6 pages)
2) Anisotropy of Resistance and Magnetoresistance of Pr0.5Nd0.5BaMn2O6 Single Crystal with Partial A‑Site Ordering [Текст] / E.V. Mostovshchikova, S.V. Naumov, T.N. Pavlov, A. Stepanov // Journal of Superconductivity and Novel Magnetism. — 2025. — V. 38. — P. 3 (8 pages)
3) (Y0.82La0.18)3Fe5O12–x: structure and transport properties [Текст] / S.N. Shkerin, A.S. Tolkacheva, S.V. Naumov, O.I. Gyrdasova, A. Stepanov // Electrochemical Materials and Technologies. — 2024. — V. 3. — P. 20243046 (9 pages)