Laboratory of Semiconductors and Semimetals

Research Areas

  • Investigation of the changes in the electronic structure in a wide range of pressures including structural phase transitions:
    • "semiconductor-metal" phase transitions
    • electronic and structural transitions
    • study of charge carriers parameters and probing the electronic structure of materials
  • Thermoelectric investigations
    • search for ways to improve thermoelectric power factor and figure of merit
    • search for new phases and states with high thermoelectric parameters

 

The most significant results obtained in the laboratory (since 2010)

  • New high pressure electronic and structural states were found in oxides
  • Semiconductor-metal transitions were found out in M2P2X6 (M-Sn, Pb; X-S,Se) ferroelectrics under pressure
  • High-pressure thermoelement was created and tested. Thermoelement composed of a miniature high-pressure chamber with the Bridgeman anvils from insulating material - boron nitride, p-type and the n-type branches are manufactured from Bi0.5Sb1.5Te3 and Bi2Te2.73Se0.27 samples

 

Projects and grants (since 2010)

  • The project of Presidium of RAS № 09-P-2-1020 "Effect of high pressure, chemical substitution and irradiation with high-energy particles on atomic, electronic and phonon subsystems of s-p and f-d materials" 2009-2011
  • RFBR project №10-08-00945_a "Materials, phases and states with improved thermoelectric properties at ultrahigh compression", 2010-2012
  • Youth Innovation Project UB RAS I-2 "The high pressure thermoelectric element with improved parameters" 2012
  • The project of Presidium of RAS №12-P-2-1004 "The patterns of change in the electronic structure of s-p and f-d materials at high pressures up to 30 GPa" 2012-2014
  • Projects under the program of oriented basic research № 13-2-032-YaTs "Investigation of materials and states with strong thermoelectric (thermomagnetic) effects at high pressure" 2013-2015
  • RFBR project № 14-02-00622_a "Functional materials under high pressure: a modification of the electrical properties,  new phase and electronic transitions, and new prospects for the use" 2014-2016
  • RFBR project № 14-02-31142 mol_a "Experimental and theoretical studies of d- and f- electron systems at high pressures" 2014-2015
  • RFBR project № 14-08-31023 mol_a "Development of a model of thermoelectric elements with improved thermoelectric parameters by using high pressure effects" 2014-2015

 

Participation at international conferences (since 2010)

  • 14th HPSP International Conference on High Pressure Semiconductor Physics, Changchun, China (2010)
  • 12th International symposium on physics of materials (ISPMA 12), Prague, Czech Republic (2011)
  • SPIE Smart Structures/NDE Conference, San Diego, USA (2011)
  • XIV International Forum on Thermoelectricity, Moscow, Russia (2011)
  • XXIII AIRAPT International Conference on High Pressure Science and Technology, Mumbai, India (2011)
  • 49th EHPRG Intl. Conference on High-Pressure Research, Budapest, Hungary (2011)
  • The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark (2012)
  • 15th International Conference on High Pressure Semiconductor Physics, Montpellier, France (2012)
  • 50th Meeting of the European High Pressure Research Group, Thessaloniki, Greece (2012)
  • XV International Forum on thermoelectricity, Tallinn, Estonia (2013)
  • Sixteenth International Conference on High Pressure in Semiconductor Physics, Mexico City, Mexico (2014)
  • 52nd European High Pressure Research Group International Meeting, Lyon, France (2014)
  • 3rd Joint Workshop on High Pressure, Planetary and Plasma Physics, Rostock, Germany (2014)
  • Joint AIRAPT-25th & EHPRG-53rd International Conference on High Pressure Science and Technology, Madrid, Spain (2015)